Hydrogen on III-V (110) surfaces: charge accumulation and STM signatures

CASTLETON, C.W.M., HÖGLUND, A., GÖTHELID, M., QIAN, M.C. and MIRBT, S., 2013. Hydrogen on III-V (110) surfaces: charge accumulation and STM signatures. Physical Review B, 88 (4). ISSN 1098-0121

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Abstract

The behavior of hydrogen on the 110 surfaces of III-V semiconductors is examined using ab initio density functional theory. It is confirmed that adsorbed hydrogen should lead to a charge accumulation layer in the case of InAs, but shown here that it should not do so for other related III-V semiconductors. It is shown that the hydrogen levels due to surface adsorbed hydrogen behave in a material dependent manner related to the ionicity of the material, and hence do not line up in the universal manner reported by others for hydrogen in the bulk of semiconductors and insulators. This fact, combined with the unusually deep point conduction band well of InAs, accounts for the occurrence of an accumulation layer on InAs(110) but not elsewhere. Furthermore, it is shown that adsorbed hydrogen should be extremely hard to distinguish from native defects (particularly vacancies) using scanning tunneling and atomic force microscopy, on both InAs(110) and other III-V (110) surfaces.

Item Type: Journal article
Publication Title: Physical Review B
Creators: Castleton, C.W.M., Höglund, A., Göthelid, M., Qian, M.C. and Mirbt, S.
Publisher: American Physical Society
Date: 25 July 2013
Volume: 88
Number: 4
ISSN: 1098-0121
Identifiers:
NumberType
10.1103/PhysRevB.88.045319DOI
Rights: ©2013 American Physical Society
Divisions: Schools > School of Science and Technology
Depositing User: EPrints Services
Date Added: 09 Oct 2015 10:17
Last Modified: 23 Aug 2016 09:09
URI: http://irep.ntu.ac.uk/id/eprint/10635

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