Increasing the equilibrium solubility of dopants in semiconductor multilayers and alloys

Höglund, A., Eriksson, O., Castleton, C.W.M. ORCID: 0000-0001-6790-6569 and Mirbt, S., 2008. Increasing the equilibrium solubility of dopants in semiconductor multilayers and alloys. Physical Review Letters, 100 (10), p. 105501. ISSN 0031-9007

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Abstract

We have theoretically studied the possibility to control the equilibrium solubility of dopants in semiconductor alloys, by strategic tuning of the alloy concentration. From the modeled cases of C0 in SixGe1−x, Zn− and Cd− in GaxIn1−xP it is seen that under certain conditions the dopant solubility can be orders of magnitude higher in an alloy or multilayer than in either of the elements of the alloy. This is found to be due to the solubility’s strong dependence on the lattice constant for size mismatched dopants. The equilibrium doping concentration in alloys or multilayers could therefore be increased significantly. More specifically, Zn− in a GaxIn1−xP multilayer is found to have a maximum solubility for x=0.9, which is 5 orders of magnitude larger than that of pure InP.

Item Type:	Journal article
Publication Title:	Physical Review Letters
Creators:	Höglund, A., Eriksson, O., Castleton, C.W.M. and Mirbt, S.
Date:	11 March 2008
Volume:	100
Number:	10
ISSN:	0031-9007
Identifiers:	Number Type 10.1103/PhysRevLett.100.105501 DOI
Divisions:	Schools > School of Science and Technology
Record created by:	EPrints Services
Date Added:	09 Oct 2015 10:36
Last Modified:	09 Jun 2017 13:34
URI:	https://irep.ntu.ac.uk/id/eprint/15560

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