Controlling dopant solubility in semiconductor alloys

Höglund, A., Castleton, C.W.M. ORCID: 0000-0001-6790-6569, Eriksson, O. and Mirbt, S., 2010. Controlling dopant solubility in semiconductor alloys. Journal of Physics - Conference Series, 242 (1), p. 12014. ISSN 0953-8984

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Abstract

We consider the formation energies and stabilities of dopants in semiconductor alloys. We show that they are not bounded by the formation energies in the related pure materials. On the contrary, by tuning the alloy composition, dopant solubility can be increased significantly above that in the pure materials. Furthermore, it is not always necessary to carry out full defect calculations in alloy supercells, since good estimates of the formation energies at the most stable substitution sites can be obtained by calculating the formation energies in the various component pure materials, but strained to the lattice parameter of the alloy.

Item Type: Journal article
Publication Title: Journal of Physics - Conference Series
Creators: Höglund, A., Castleton, C.W.M., Eriksson, O. and Mirbt, S.
Publisher: Institute of Physics
Date: 2010
Volume: 242
Number: 1
ISSN: 0953-8984
Identifiers:
NumberType
10.1088/1742-6596/242/1/012014DOI
Rights: ©2010 IOP Publishing Ltd
Divisions: Schools > School of Science and Technology
Depositing User: EPrints Services
Date Added: 09 Oct 2015 10:43
Last Modified: 09 Jun 2017 13:37
URI: http://irep.ntu.ac.uk/id/eprint/17092

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