A search for symmetry in the dissipation between the current entry and exit points in the quantum Hall regime of a silicon MOSFET

Ouali, F.F., Challis, L.J. and Cooper, J., 1992. A search for symmetry in the dissipation between the current entry and exit points in the quantum Hall regime of a silicon MOSFET. Semiconductor Science and Technology, 7 (4), pp. 608-611. ISSN 0268-1242

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Item Type: Journal article
Publication Title: Semiconductor Science and Technology
Creators: Ouali, F.F., Challis, L.J. and Cooper, J.
Date: 1992
Volume: 7
Number: 4
ISSN: 0268-1242
Divisions: Schools > School of Science and Technology
Depositing User: EPrints Services
Date Added: 09 Oct 2015 11:14
Last Modified: 19 Oct 2015 14:43
URI: http://irep.ntu.ac.uk/id/eprint/24928

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