Lopez, J.R., Akutsu, H. and Martin, L. ORCID: 0000-0002-5330-5700, 2015. Radical-cation salt with novel BEDT-TTF packing motif containing tris(oxalato)germanate(IV). Synthetic Metals, 209, pp. 188-191. ISSN 0379-6779
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Abstract
The synthesis, crystal structure and resistivity of a new semiconducting BEDT-TTF radical-cation salt containing the tris(oxalato)germanate(IV) anion is reported. BEDT-TTF4[Ge(C2O4)3].0.5dichloromethane crystallizes in the space group P21/c, a = 18.322(7), b = 11.919(4), c = 32.746(11) Å, β = 105.797(5)°, V = 6881(4) Å3, T = 295(1) K, Z = 4. Electrical resistivity measurements show that BEDT-TTF4[Ge(C2O4)3].0.5dichloromethane is a semiconductor with an activation energy of 0.224 eV and room temperature resistivity of 212 Ω cm.
Item Type: | Journal article | ||||
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Publication Title: | Synthetic Metals | ||||
Creators: | Lopez, J.R., Akutsu, H. and Martin, L. | ||||
Publisher: | Elsevier | ||||
Date: | November 2015 | ||||
Volume: | 209 | ||||
ISSN: | 0379-6779 | ||||
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Divisions: | Schools > School of Science and Technology | ||||
Record created by: | Linda Sullivan | ||||
Date Added: | 04 Jul 2016 14:54 | ||||
Last Modified: | 16 Oct 2017 13:11 | ||||
URI: | https://irep.ntu.ac.uk/id/eprint/28068 |
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