Radical-cation salt with novel BEDT-TTF packing motif containing tris(oxalato)germanate(IV)

Lopez, JR, Akutsu, H and Martin, L ORCID: 0000-0002-5330-5700, 2015. Radical-cation salt with novel BEDT-TTF packing motif containing tris(oxalato)germanate(IV). Synthetic Metals, 209, pp. 188-191. ISSN 0379-6779

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The synthesis, crystal structure and resistivity of a new semiconducting BEDT-TTF radical-cation salt containing the tris(oxalato)germanate(IV) anion is reported. BEDT-TTF4[Ge(C2O4)3].0.5dichloromethane crystallizes in the space group P21/c, a = 18.322(7), b = 11.919(4), c = 32.746(11) Å, β = 105.797(5)°, V = 6881(4) Å3, T = 295(1) K, Z = 4. Electrical resistivity measurements show that BEDT-TTF4[Ge(C2O4)3].0.5dichloromethane is a semiconductor with an activation energy of 0.224 eV and room temperature resistivity of 212 Ω cm.

Item Type: Journal article
Publication Title: Synthetic Metals
Creators: Lopez, J.R., Akutsu, H. and Martin, L.
Publisher: Elsevier
Date: November 2015
Volume: 209
ISSN: 0379-6779
Divisions: Schools > School of Science and Technology
Depositing User: Linda Sullivan
Date Added: 04 Jul 2016 14:54
Last Modified: 31 Jul 2017 03:00
URI: http://irep.ntu.ac.uk/id/eprint/28068

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