Nanoscale arrays of antimony telluride single crystals by selective chemical vapor deposition

Huang, R., Benjamin, S.L. ORCID: 0000-0002-5038-1599, Gurnani, C., Wang, Y., Hector, A.L., Levason, W., Reid, G. and De Groot, C.H., 2016. Nanoscale arrays of antimony telluride single crystals by selective chemical vapor deposition. Scientific Reports, 6, p. 27593. ISSN 2045-2322

Preview

Text 5781_Benjamin.pdf - Published version Download (2MB) | Preview

Abstract

Arrays of individual single nanocrystals of Sb2Te3 have been formed using selective chemical vapor deposition (CVD) from a single source precursor. Crystals are self-assembled reproducibly in confined spaces of 100 nm diameter with pitch down to 500 nm. The distribution of crystallite sizes across the arrays is very narrow (standard deviation of 15%) and is affected by both the hole diameter and the array pitch. The preferred growth of the crystals in the <1 1 0> orientation along the diagonal of the square holes strongly indicates that the diffusion of adatoms results in a near thermodynamic equilibrium growth mechanism of the nuclei. A clear relationship between electrical resistivity and selectivity is established across a range of metal selenides and tellurides, showing that conductive materials result in more selective growth and suggesting that electron donation is of critical importance for selective deposition.

Item Type:	Journal article
Publication Title:	Scientific Reports
Creators:	Huang, R., Benjamin, S.L., Gurnani, C., Wang, Y., Hector, A.L., Levason, W., Reid, G. and De Groot, C.H.
Publisher:	Nature Publishing Group
Date:	10 June 2016
Volume:	6
ISSN:	2045-2322
Identifiers:	Number Type 10.1038/srep27593 DOI
Divisions:	Schools > School of Science and Technology
Record created by:	Jonathan Gallacher
Date Added:	26 Jul 2016 12:39
Last Modified:	18 Oct 2017 12:27
URI:	https://irep.ntu.ac.uk/id/eprint/28204

Actions (login required)

Edit View

Views

Downloads