Nanoscale arrays of antimony telluride single crystals by selective chemical vapor deposition

Huang, R., Benjamin, S.L. ORCID: 0000-0002-5038-1599, Gurnani, C., Wang, Y., Hector, A.L., Levason, W., Reid, G. and De Groot, C.H., 2016. Nanoscale arrays of antimony telluride single crystals by selective chemical vapor deposition. Scientific Reports, 6, p. 27593. ISSN 2045-2322

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Abstract

Arrays of individual single nanocrystals of Sb2Te3 have been formed using selective chemical vapor deposition (CVD) from a single source precursor. Crystals are self-assembled reproducibly in confined spaces of 100 nm diameter with pitch down to 500 nm. The distribution of crystallite sizes across the arrays is very narrow (standard deviation of 15%) and is affected by both the hole diameter and the array pitch. The preferred growth of the crystals in the <1 1 0> orientation along the diagonal of the square holes strongly indicates that the diffusion of adatoms results in a near thermodynamic equilibrium growth mechanism of the nuclei. A clear relationship between electrical resistivity and selectivity is established across a range of metal selenides and tellurides, showing that conductive materials result in more selective growth and suggesting that electron donation is of critical importance for selective deposition.

Item Type: Journal article
Publication Title: Scientific Reports
Creators: Huang, R., Benjamin, S.L., Gurnani, C., Wang, Y., Hector, A.L., Levason, W., Reid, G. and De Groot, C.H.
Publisher: Nature Publishing Group
Date: 10 June 2016
Volume: 6
ISSN: 2045-2322
Identifiers:
NumberType
10.1038/srep27593DOI
Divisions: Schools > School of Science and Technology
Depositing User: Jonathan Gallacher
Date Added: 26 Jul 2016 12:39
Last Modified: 18 Oct 2017 12:27
URI: http://irep.ntu.ac.uk/id/eprint/28204

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