Compositionally tunable ternary Bi2(Se1-xTex)3 and (Bi1-ySby)2Te3 thin films via low pressure chemical vapor deposition

Benjamin, S.L. ORCID: 0000-0002-5038-1599, de Groot, C.H., Gurnani, C., Hawken, S.L., Hector, A.L., Huang, R., Jura, M., Levason, W., Reid, E., Reid, G., Richards, S.P. and Stenning, G.B.G., 2018. Compositionally tunable ternary Bi2(Se1-xTex)3 and (Bi1-ySby)2Te3 thin films via low pressure chemical vapor deposition. Journal of Materials Chemistry C, 6 (29), pp. 7734-7739. ISSN 2050-7526

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Abstract

The inherently rapid ligand substitution kinetics associated with the novel and chemically compatible precursors, [MCl3(EnBu2)3] (M = Sb, Bi; E = Se, Te), enable CVD growth of ternary Bi2(Se1−xTex)3 and (Bi1−ySby)2Te3 thin films with very good compositional, structural and morphological control, for the first time. X-ray diffraction data follow Vegard's law and Raman bands shift linearly with the atom substitutions, indicating very well-distributed solid solutions.

Item Type: Journal article
Publication Title: Journal of Materials Chemistry C
Creators: Benjamin, S.L., de Groot, C.H., Gurnani, C., Hawken, S.L., Hector, A.L., Huang, R., Jura, M., Levason, W., Reid, E., Reid, G., Richards, S.P. and Stenning, G.B.G.
Publisher: Royal Society of Chemistry
Date: 2018
Volume: 6
Number: 29
ISSN: 2050-7526
Identifiers:
NumberType
10.1039/c8tc01285gDOI
Divisions: Schools > School of Science and Technology
Depositing User: Jonathan Gallacher
Date Added: 04 Jul 2018 11:05
Last Modified: 02 Aug 2018 09:27
URI: http://irep.ntu.ac.uk/id/eprint/33999

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