Percolation threshold enables optical resistive‐memory switching and light‐tuneable synaptic learning in segregated nanocomposites

Jaafar, A.H., O'Neill, M. ORCID: 0000-0002-0232-5250, Kelly, S.M., Verrelli, E. and Kemp, N.T., 2019. Percolation threshold enables optical resistive‐memory switching and light‐tuneable synaptic learning in segregated nanocomposites. Advanced Electronic Materials, 5 (7): 1900197. ISSN 2199-160X

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Abstract

An optical memristor where the electrical resistance memory depends on the history of both the current flowing through the device and the irradiance of incident light onto it is demonstrated. It is based on a nanocomposite consisting of functionalized gold nanoparticles in an optically active azobenzene polymer matrix. The composite has an extremely low percolation threshold of 0.04% by volume for conductivity because of the aggregation of the conducting nanoparticles into filamentary nanochannels. Optical irradiation results in photomechanical switching through expansion of the thin film from above to below the percolation threshold, giving a large LOW/HIGH resistance ratio of 103. The device acts as an artificial synapse, the conductivity or plasticity of which can be independently modulated, either electrically or optically, to enable tunable and reconfigurable synaptic circuits for brain‐inspired artificial intelligent or visual memory arrays. The lifetime of the resistive‐memory states is also optically controllable, which enables spatial modulation of long‐ and short‐term memory.

Item Type: Journal article
Publication Title: Advanced Electronic Materials
Creators: Jaafar, A.H., O'Neill, M., Kelly, S.M., Verrelli, E. and Kemp, N.T.
Publisher: Wiley‐VCH Verlag
Date: July 2019
Volume: 5
Number: 7
ISSN: 2199-160X
Identifiers:
NumberType
10.1002/aelm.201900197DOI
Divisions: Schools > School of Science and Technology
Depositing User: Linda Sullivan
Date Added: 08 Aug 2019 08:05
Last Modified: 27 Sep 2019 15:20
URI: http://irep.ntu.ac.uk/id/eprint/37189

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