Solution-processable and photopolymerisable TiO2 nanorods as dielectric layers for thin film transistors

Cheng, F., Verrelli, E., Alharthi, F.A., Das, S., Anthopoulos, T.D., Lai, K.T., Kemp, N.T., O'Neill, M. ORCID: 0000-0002-0232-5250 and Kelly, S.M., 2020. Solution-processable and photopolymerisable TiO2 nanorods as dielectric layers for thin film transistors. RSC Advances, 10 (43), pp. 25540-25546.

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Abstract

We report the fabrication of a solution-processed n-type Thin Film Transistor (TFT) with current on/off ratios of 104, a turn-on voltage (VON) of 1.2 V and a threshold voltage (VT) of 6.2 V. The TFT incorporates an insoluble and intractable dielectric layer (k = 7–9) prepared in situ from solution-processed and then photopolymerised ligand-stabilised, inorganic/organic TiO2 nanorods. A solution processed zinc oxide (ZnO) layer acts as the semiconductor. The new surface-modified TiO2 nanorods were synthesised using a ligand replacement process with a monolayer coating of photopolymerisable 10-undecynylphosphonic acid (10UCYPA) to render them both soluble in common organic solvents and be photopolymerisable using UV-illumination after having been deposited on substrate surfaces from solution and drying.

Item Type: Journal article
Publication Title: RSC Advances
Creators: Cheng, F., Verrelli, E., Alharthi, F.A., Das, S., Anthopoulos, T.D., Lai, K.T., Kemp, N.T., O'Neill, M. and Kelly, S.M.
Publisher: Royal Society of Chemistry (RSC)
Date: 2020
Volume: 10
Number: 43
Identifiers:
NumberType
10.1039/d0ra04445hDOI
1352555Other
Rights: This journal is © The Royal Society of Chemistry 2020. Open Access Article. Published on 06 July 2020. Downloaded on 11/10/2020 3:02:58 PM. This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence.
Divisions: Schools > School of Science and Technology
Record created by: Linda Sullivan
Date Added: 13 Aug 2020 08:40
Last Modified: 11 Nov 2020 08:51
URI: http://irep.ntu.ac.uk/id/eprint/40447

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