Third-harmonic generation and imaging with resonant Si membrane metasurface

Zheng, Z. ORCID: 0000-0002-9676-2856, Xu, L. ORCID: 0000-0001-9071-4311, Huang, L., Smirnova, D., Kamali, K.Z., Yousefi, A. ORCID: 0000-0001-7478-7991, Deng, F., Camacho-Morales, R., Ying, C. ORCID: 0000-0002-7279-1388, Miroshnichenko, A.E., Neshev, D.N. and Rahmani, M. ORCID: 0000-0001-9268-4793, 2023. Third-harmonic generation and imaging with resonant Si membrane metasurface. Opto-Electronic Advances, 6 (8): 220174. ISSN 2096-4579

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Abstract

Dielectric metasurfaces play an increasingly important role in enhancing optical nonlinear generations owing to their ability to support strong light-matter interactions based on Mie-type multipolar resonances. Compared to metasurfaces composed of the periodic arrangement of nanoparticles, inverse, so-called, membrane metasurfaces offer unique possibilities for supporting multipolar resonances, while maintaining small unit cell size, large mode volume and high field enhancement for enhancing nonlinear frequency conversion. Here, we theoretically and experimentally investigate the formation of bound states in the continuum (BICs) from silicon dimer-hole membrane metasurfaces. We demonstrate that our BIC-formed resonance features a strong and tailorable electric near-field confinement inside the silicon membrane films. Furthermore, we show that by tuning the gap between the holes, one can open a leaky channel to transform these regular BICs into quasi-BICs, which can be excited directly under normal plane wave incidence. To prove the capabilities of such metasurfaces, we demonstrate the conversion of an infrared image to the visible range, based on the Third-harmonic generation (THG) process with the resonant membrane metasurfaces. Our results suggest a new paradigm for realising efficient nonlinear photonics metadevices and hold promise for extending the applications of nonlinear structuring surfaces to new types of all-optical near-infrared imaging technologies.

Item Type: Journal article
Publication Title: Opto-Electronic Advances
Creators: Zheng, Z., Xu, L., Huang, L., Smirnova, D., Kamali, K.Z., Yousefi, A., Deng, F., Camacho-Morales, R., Ying, C., Miroshnichenko, A.E., Neshev, D.N. and Rahmani, M.
Publisher: Opto-Electronic Advances
Date: 10 May 2023
Volume: 6
Number: 8
ISSN: 2096-4579
Identifiers:
NumberType
10.29026/oea.2023.220174DOI
1850906Other
Rights: © The Author(s) 2023. Published by Institute of Optics and Electronics, Chinese Academy of Sciences. This article is licensed under a Creative Commons Attribution 4.0 International License. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
Divisions: Schools > School of Science and Technology
Record created by: Laura Ward
Date Added: 12 Jan 2024 09:16
Last Modified: 12 Jan 2024 09:16
URI: https://irep.ntu.ac.uk/id/eprint/50672

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