Relative concentration and structure of native defects in GaP

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Höglund, A., Castleton, C.W.M. ORCID: 0000-0001-6790-6569 and Mirbt, S., 2005. Relative concentration and structure of native defects in GaP. Physical Review B, 72 (19), p. 195213. ISSN 1098-0121

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Official URL: http://dx.doi.org/10.1103/PhysRevB.72.195213

Abstract

The native defects in the compound semiconductor GaP have been studied using a pseudopotential density functional theory method in order to determine their relative concentrations and the most stable charge states. The electronic and atomic structures are presented and the defect concentrations are estimated using calculated formation energies. Relaxation effects are taken into account fully and produce negative-U charge transfer levels for VP and PGa. The concentration of VGa is in good agreement with the results of positron annihilation experiments. The charge transfer levels presented compare qualitatively well with experiments where available. The effect of stoichiometry on the defect concentrations is also described and is shown to be considerable. The lowest formation energies are found for PGa +2 in p-type and VGa −3 in n-type GaP under P-rich conditions, and for GaP −2 in n-type GaP under Ga-rich conditions. Finally, the finite size errors arising from the use of supercells with periodic boundary conditions are examined.

Item Type:

Journal article

Publication Title:

Physical Review B

Creators:

Höglund, A., Castleton, C.W.M. and Mirbt, S.

Date:

30 November 2005

Volume:

Number:

ISSN:

1098-0121