Items where Author is "Mirbt, S"

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Number of items: 13.

Journal article

Castleton, CWM ORCID: 0000-0001-6790-6569, Höglund, A, Göthelid, M, Qian, MC and Mirbt, S, 2013. Hydrogen on III-V (110) surfaces: charge accumulation and STM signatures. Physical Review B, 88 (4). ISSN 1098-0121

Höglund, A, Castleton, CWM ORCID: 0000-0001-6790-6569, Eriksson, O and Mirbt, S, 2010. Controlling dopant solubility in semiconductor alloys. Journal of Physics - Conference Series, 242 (1), p. 12014. ISSN 0953-8984

Castleton, CWM ORCID: 0000-0001-6790-6569, Höglund, A and Mirbt, S, 2009. Density functional theory calculations of defect energies using supercells. Modelling and Simulation in Materials Science and Engineering, 17 (8), 084003. ISSN 0965-0393

Höglund, A, Mirbt, S, Castleton, CWM ORCID: 0000-0001-6790-6569 and Göthelid, M, 2008. Breakdown of cation vacancies into anion vacancy-antisite complexes on III-V semiconductor surfaces. Physical Review B, 78 (15), p. 155318. ISSN 1098-0121

Höglund, A, Eriksson, O, Castleton, CWM ORCID: 0000-0001-6790-6569 and Mirbt, S, 2008. Increasing the equilibrium solubility of dopants in semiconductor multilayers and alloys. Physical Review Letters, 100 (10), p. 105501. ISSN 0031-9007

Höglund, A, Castleton, CWM ORCID: 0000-0001-6790-6569 and Mirbt, S, 2008. Diffusion mechanism of Zn in InP and GaP from first principles. Physical Review B, 77 (11), p. 113201. ISSN 1098-0121

Castleton, CWM ORCID: 0000-0001-6790-6569, Höglund, A and Mirbt, S, 2006. Managing the supercell approximation for charged defects in semiconductors: finite size scaling, charge correction factors, the bandgap problem and the ab initio dielectric constant. Physical Review B, 73 (3), 035215. ISSN 1098-0121

Höglund, A, Castleton, CWM ORCID: 0000-0001-6790-6569, Göthelid, M, Johansson, B and Mirbt, S, 2006. Point defects on the (110) surfaces of InP, InAs and InSb: a comparison with bulk. Physical Review B, 74 (7), 075332. ISSN 1098-0121

Höglund, A, Castleton, CWM ORCID: 0000-0001-6790-6569 and Mirbt, S, 2005. Relative concentration and structure of native defects in GaP. Physical Review B, 72 (19), p. 195213. ISSN 1098-0121

Castleton, CWM ORCID: 0000-0001-6790-6569 and Mirbt, S, 2004. Finite-size scaling as a cure for supercell approximation errors in calculations of neutral native defects in InP. Physical Review B, 70 (19), p. 195202. ISSN 1098-0121

Castleton, CWM ORCID: 0000-0001-6790-6569 and Mirbt, S, 2003. Ab initio study of neutral vacancies in InP using supercells and finite size scaling. Physica B: Condensed Matter, 340, pp. 407-411. ISSN 0921-4526

Castleton, CWM ORCID: 0000-0001-6790-6569 and Mirbt, S, 2003. Structure of the [ZnIn-VP] defect complex in Zn-doped InP. Physical Review B, 68 (8), 085203. ISSN 1098-0121

Conference contribution

Castleton, CWM ORCID: 0000-0001-6790-6569 and Mirbt, S, 2002. Structure of the [ZnIn-VP] defect complex in Zn-doped InP. In: 26th International Conference on the Physics of Semiconductors, Edinburgh, 29 July - 2 August 2002.

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