Items where Author is "Mirbt, S"

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Number of items: 13.

Journal article

CASTLETON, C.W.M., HÖGLUND, A., GÖTHELID, M., QIAN, M.C. and MIRBT, S., 2013. Hydrogen on III-V (110) surfaces: charge accumulation and STM signatures. Physical Review B, 88 (4). ISSN 1098-0121

HÖGLUND, A., CASTLETON, C.W.M., ERIKSSON, O. and MIRBT, S., 2010. Controlling dopant solubility in semiconductor alloys. Journal of Physics - Conference Series, 242 (1), p. 12014. ISSN 0953-8984

CASTLETON, C.W.M., HÖGLUND, A. and MIRBT, S., 2009. Density functional theory calculations of defect energies using supercells. Modelling and Simulation in Materials Science and Engineering, 17 (8), 084003. ISSN 0965-0393

HÖGLUND, A., MIRBT, S., CASTLETON, C.W.M. and GÖTHELID, M., 2008. Breakdown of cation vacancies into anion vacancy-antisite complexes on III-V semiconductor surfaces. Physical Review B, 78 (15), p. 155318. ISSN 1098-0121

HÖGLUND, A., ERIKSSON, O., CASTLETON, C.W.M. and MIRBT, S., 2008. Increasing the equilibrium solubility of dopants in semiconductor multilayers and alloys. Physical Review Letters, 100 (10), p. 105501. ISSN 0031-9007

HÖGLUND, A., CASTLETON, C.W.M. and MIRBT, S., 2008. Diffusion mechanism of Zn in InP and GaP from first principles. Physical Review B, 77 (11), p. 113201. ISSN 1098-0121

HÖGLUND, A., CASTLETON, C.W.M., GÖTHELID, M., JOHANSSON, B. and MIRBT, S., 2006. Point defects on the (110) surfaces of InP, InAs and InSb: a comparison with bulk. Physical Review B, 74 (7), 075332. ISSN 1098-0121

CASTLETON, C.W.M., HÖGLUND, A. and MIRBT, S., 2006. Managing the supercell approximation for charged defects in semiconductors: finite size scaling, charge correction factors, the bandgap problem and the ab initio dielectric constant. Physical Review B, 73 (3), 035215. ISSN 1098-0121

HÖGLUND, A., CASTLETON, C.W.M. and MIRBT, S., 2005. Relative concentration and structure of native defects in GaP. Physical Review B, 72 (19), p. 195213. ISSN 1098-0121

CASTLETON, C.W.M. and MIRBT, S., 2004. Finite-size scaling as a cure for supercell approximation errors in calculations of neutral native defects in InP. Physical Review B, 70 (19), p. 195202. ISSN 1098-0121

CASTLETON, C.W.M. and MIRBT, S., 2003. Ab initio study of neutral vacancies in InP using supercells and finite size scaling. Physica B: Condensed Matter, 340, pp. 407-411. ISSN 0921-4526

CASTLETON, C.W.M. and MIRBT, S., 2003. Structure of the [ZnIn-VP] defect complex in Zn-doped InP. Physical Review B, 68 (8), 085203. ISSN 1098-0121

Conference contribution

CASTLETON, C.W.M. and MIRBT, S., 2002. Structure of the [ZnIn-VP] defect complex in Zn-doped InP. In: 26th International Conference on the Physics of Semiconductors, Edinburgh, 29 July - 2 August 2002.

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