Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on n-Si

Evangelou, E.K., Wiemer, C., Fanciulli, M., Sethu, M. and Cranton, W. ORCID: 0000-0002-0142-7810, 2003. Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on n-Si. Journal of Applied Physics, 94 (1), pp. 318-325. ISSN 0021-8979

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Abstract

Yttrium oxide dielectric films were grown by rf-magnetron sputtering on n-Si(100) substrates and annealed in vacuum at temperatures ranging from 400 to 600 °C. The main aim of this work was the investigation of the interface between the dielectric film and silicon. Both structural (x-ray diffraction and transmission electron microscopy) and electrical characterization were used for this purpose. No structural change was observed on the interfacial native oxide layer after annealing at 600 °C for 1 h. Metal–oxide–semiconductor structures defined by the evaporation of Al electrodes show low leakage currents, moderate dielectric constant (around 14), and high densities of positive charges trapped in the oxide. Hysteresis effects in capacitance–voltage (C–V) curves reduce with the annealing temperature. Another interesting observation is the parallel shift of the C–V curves along the voltage axis with frequency. An insulator trap model is proposed to explain this behavior.

Item Type:	Journal article
Publication Title:	Journal of Applied Physics
Creators:	Evangelou, E.K., Wiemer, C., Fanciulli, M., Sethu, M. and Cranton, W.
Date:	2003
Volume:	94
Number:	1
ISSN:	0021-8979
Identifiers:	Number Type 10.1063/1.1580644 DOI
Rights:	© 2003 American Institute of Physics
Divisions:	Schools > School of Science and Technology
Record created by:	EPrints Services
Date Added:	09 Oct 2015 10:36
Last Modified:	24 Mar 2022 14:28
URI:	https://irep.ntu.ac.uk/id/eprint/15460

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