Feasibility of a laterally emitting thin film electroluminescence device as an application specific integrated display

Rüdiger, J., 2001. Feasibility of a laterally emitting thin film electroluminescence device as an application specific integrated display. PhD, Nottingham Trent University.

10183396.pdf - Published version

Download (16MB) | Preview


The design of an application specific integrated display (ASID) is demonstrated. The presented ASID is based on the lateral emitting thin film electroluminescence (LETFEL) technology whereby the shape of the display elements is defined by a metal layer. The design is support by theoretical models.

Different Electrical models have been developed for the transient characteristics of TFEL devices and are compared with measured characteristics. The single interface state model, which is based on the assumption that all interface electrons are located on a defined energy level, leads to two equivalent differential equations. The simulated characteristics axe in good agreement with measured characteristics, especially for non annealed TFEL devices. The model with distributed interface electrons over the the bandgap leads to a system of differential equations. With this model, the agreement between measured and simulated characteristic could be improved for annealed devices. Furthermore, the case that the interface distribution conserves the equilibrium distribution during the emission process is discussed. Problems in measuring the interface electron distribution are pointed out.

Based on the physical electrical models of TFEL devices, equivalent RC-models with single interface states and distributed interface states are deduced in a theoretical way. The models consists of nonlinear resistors, modeling the tunneling behaviour, and nonlinear capacities, modeling behaviour of the interface electrons. Simulation results are in good agreement with measured results and thus, the RC-models are suitable for embedded simulation of driver electronics and TFEL device.

A novel analytic model of the optical behaviour of LETFEL structures is developed and employed for calculating the outcoupled light of a pixel used in light emitting dot matrix displays. The presented solutions are based on a ray optics approximation whereby the absorption of the light within the light generating medium (phosphor material) and the transmission behaviour of the phosphor-air interface is taken into account, as well as the micro-mirror width. The model is applied to the circular, square and hexagonal pixels. Furthermore, the influence of MIS-efFects on the TFEL characteristic and the electrostatic field distribution in TFELs are studied. Additionally, the feasibility of fabrication of LETFEL devices using magnet enhanced ion etch has been investigated.

Item Type: Thesis
Creators: Rüdiger, J.
Date: 2001
ISBN: 9781369316018
Divisions: Schools > School of Science and Technology
Record created by: Linda Sullivan
Date Added: 24 Sep 2020 13:59
Last Modified: 16 Aug 2023 11:02
URI: https://irep.ntu.ac.uk/id/eprint/40912

Actions (login required)

Edit View Edit View


Views per month over past year


Downloads per month over past year