A new reactive sputtering technique for the low temperature deposition of transparent light emitting ZnS:Mn thin films

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Wakeham, S., Thwaites, M., Tsakonas, C. ORCID: 0000-0002-7342-3405, Cranton, W. ORCID: 0000-0002-0142-7810, Ranson, R. ORCID: 0000-0002-4619-3982, Boutaud, G. and Koutsogeorgis, D.C. ORCID: 0000-0001-6167-1084, 2010. A new reactive sputtering technique for the low temperature deposition of transparent light emitting ZnS:Mn thin films. Physica Status Solidi A, 207 (7), pp. 1614-1618. ISSN 1862-6300

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Abstract

The temperature sensitive nature of the substrates used in the flexible displays market necessitates a low temperature deposition technique for processing them. ZnS:Mn exhibiting high intensity photoluminescence and good crystallinity has been deposited onto Si wafers, glass microscope slides and polymeric substrates using a new reactive sputtering technology referred to as HiTUS. This technique enables very high deposition rates and requires no substrate heating. When incorporated as part of a complete EL device, as-deposited ZnS:Mn films are seen to exhibit stable electroluminescence on Si, glass and planarised PET substrate materials. Post annealing of the devices on Si and glass at temperatures of up to 600 °C show that the HiTUS films perform better than equivalent ZnS:Mn films deposited using RF magnetron sputtering.

Item Type:

Journal article

Publication Title:

Physica Status Solidi A

Creators:

Wakeham, S., Thwaites, M., Tsakonas, C., Cranton, W., Ranson, R., Boutaud, G. and Koutsogeorgis, D.C.

Publisher:

Wiley-Blackwell

Date:

2010

Volume:

207