Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices

Marlow, C.A., Taylor, R.P., Martin, T.P., Scannell, B.C., Linke, H., Fairbanks, M.S., Hall, G.D.R., Shorubalko, I., Samuelson, L., Fromhold, T.M., Brown, C.V. ORCID: 0000-0002-1559-3238, Hackens, B., Faniel, S., Gustin, C., Bayot, V., Wallart, X., Bollaert, S. and Cappy, A., 2006. Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices. Physical Review B, 73 (19).

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Item Type: Journal article
Publication Title: Physical Review B
Creators: Marlow, C.A., Taylor, R.P., Martin, T.P., Scannell, B.C., Linke, H., Fairbanks, M.S., Hall, G.D.R., Shorubalko, I., Samuelson, L., Fromhold, T.M., Brown, C.V., Hackens, B., Faniel, S., Gustin, C., Bayot, V., Wallart, X., Bollaert, S. and Cappy, A.
Date: 2006
Volume: 73
Number: 19
Divisions: Schools > School of Science and Technology
Depositing User: EPrints Services
Date Added: 09 Oct 2015 10:45
Last Modified: 09 Jun 2017 13:38
URI: http://irep.ntu.ac.uk/id/eprint/17704

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