Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices

Marlow, CA, Taylor, RP, Martin, TP, Scannell, BC, Linke, H, Fairbanks, MS, Hall, GDR, Shorubalko, I, Samuelson, L, Fromhold, TM, Brown, CV ORCID: https://orcid.org/0000-0002-1559-3238, Hackens, B, Faniel, S, Gustin, C, Bayot, V, Wallart, X, Bollaert, S and Cappy, A, 2006. Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices. Physical Review B, 73 (19): 195318. ISSN 2469-9950

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Item Type:	Journal article
Publication Title:	Physical Review B
Creators:	Marlow, C.A., Taylor, R.P., Martin, T.P., Scannell, B.C., Linke, H., Fairbanks, M.S., Hall, G.D.R., Shorubalko, I., Samuelson, L., Fromhold, T.M., Brown, C.V., Hackens, B., Faniel, S., Gustin, C., Bayot, V., Wallart, X., Bollaert, S. and Cappy, A.
Publisher:	American Physical Society
Date:	2006
Volume:	73
Number:	19
ISSN:	2469-9950
Identifiers:	Number Type 10.1103/PhysRevB.73.195318 DOI
Divisions:	Schools > School of Science and Technology
Record created by:	EPrints Services
Date Added:	09 Oct 2015 10:45
Last Modified:	25 Aug 2022 10:22
URI:	https://irep.ntu.ac.uk/id/eprint/17704

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