High-k dielectrics based field plate edge termination engineering in 4H-SiC Schottky diode

Shankar, B., Gupta, S.K., Taube, W.R. ORCID: 0000-0003-4753-2015 and Akhtar, J., 2016. High-k dielectrics based field plate edge termination engineering in 4H-SiC Schottky diode. International Journal of Electronics, 103 (12), pp. 2064-2074. ISSN 0020-7217

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Item Type: Journal article
Publication Title: International Journal of Electronics
Creators: Shankar, B., Gupta, S.K., Taube, W.R. and Akhtar, J.
Publisher: Taylor & Francis
Date: 2016
Volume: 103
Number: 12
ISSN: 0020-7217
Identifiers:
NumberType
10.1080/00207217.2016.1178340DOI
Divisions: Schools > School of Science and Technology
Depositing User: Linda Sullivan
Date Added: 14 Aug 2019 12:56
Last Modified: 14 Aug 2019 12:56
URI: http://irep.ntu.ac.uk/id/eprint/37309

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