High-k dielectrics based field plate edge termination engineering in 4H-SiC Schottky diode

Shankar, B, Gupta, SK, Taube, WR ORCID: https://orcid.org/0000-0003-4753-2015 and Akhtar, J, 2016. High-k dielectrics based field plate edge termination engineering in 4H-SiC Schottky diode. International Journal of Electronics, 103 (12), pp. 2064-2074. ISSN 0020-7217

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Item Type:	Journal article
Publication Title:	International Journal of Electronics
Creators:	Shankar, B., Gupta, S.K., Taube, W.R. and Akhtar, J.
Publisher:	Taylor & Francis
Date:	2016
Volume:	103
Number:	12
ISSN:	0020-7217
Identifiers:	Number Type 10.1080/00207217.2016.1178340 DOI
Divisions:	Schools > School of Science and Technology
Record created by:	Linda Sullivan
Date Added:	14 Aug 2019 12:56
Last Modified:	14 Aug 2019 12:56
URI:	https://irep.ntu.ac.uk/id/eprint/37309

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