Device modelling of bendable MOS transistors

Heidari, H., Navaraj, W.T. ORCID: 0000-0003-4753-2015, Toldi, G. and Dahiya, R., 2016. Device modelling of bendable MOS transistors. In: 2016 IEEE International Symposium on Circuits and Systems (ISCAS), Montreal, QC, Canada, 22-25 May 2016.

Full text not available from this repository.
Item Type: Conference contribution
Creators: Heidari, H., Navaraj, W.T., Toldi, G. and Dahiya, R.
Date: May 2016
Identifiers:
NumberType
10.1109/iscas.2016.7527501DOI
Divisions: Schools > School of Science and Technology
Depositing User: Jonathan Gallacher
Date Added: 15 Aug 2019 10:35
Last Modified: 15 Aug 2019 10:35
URI: http://irep.ntu.ac.uk/id/eprint/37334

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