Device modelling of bendable MOS transistors

Heidari, H, Navaraj, WT ORCID: https://orcid.org/0000-0003-4753-2015, Toldi, G and Dahiya, R, 2016. Device modelling of bendable MOS transistors. In: 2016 IEEE International Symposium on Circuits and Systems (ISCAS), Montreal, QC, Canada, 22-25 May 2016.

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Item Type:	Conference contribution
Creators:	Heidari, H., Navaraj, W.T., Toldi, G. and Dahiya, R.
Date:	May 2016
Identifiers:	Number Type 10.1109/iscas.2016.7527501 DOI
Divisions:	Schools > School of Science and Technology
Record created by:	Jonathan Gallacher
Date Added:	15 Aug 2019 10:35
Last Modified:	15 Aug 2019 10:35
URI:	https://irep.ntu.ac.uk/id/eprint/37334

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