Formation of misfit dislocations in strained-layer GaAs/InxGa1-xAs/GaAs heterostructures during postfabrication thermal processing

Liu, X.W., Hopgood, A.A., Usher, B.F., Wang, H. and Braithwaite, N.S.J., 2003. Formation of misfit dislocations in strained-layer GaAs/InxGa1-xAs/GaAs heterostructures during postfabrication thermal processing. Journal of Applied Physics, 94 (12), pp. 7496-7501. ISSN 0021-8979

Full text not available from this repository.
Item Type: Journal article
Publication Title: Journal of Applied Physics
Creators: Liu, X.W., Hopgood, A.A., Usher, B.F., Wang, H. and Braithwaite, N.S.J.
Publisher: American Institute of Physics
Place of Publication: Melville, NY
Date: 2003
Volume: 94
Number: 12
ISSN: 0021-8979
Divisions: Schools > School of Science and Technology
Depositing User: EPrints Services
Date Added: 09 Oct 2015 10:09
Last Modified: 09 Oct 2015 10:09
URI: http://irep.ntu.ac.uk/id/eprint/8701

Actions (login required)

Edit View Edit View

Views

Views per month over past year

Downloads

Downloads per month over past year