Formation of misfit dislocations in strained-layer GaAs/InxGa1-xAs/GaAs heterostructures during postfabrication thermal processing

Liu, XW, Hopgood, AA, Usher, BF, Wang, H and Braithwaite, NSJ, 2003. Formation of misfit dislocations in strained-layer GaAs/InxGa1-xAs/GaAs heterostructures during postfabrication thermal processing. Journal of Applied Physics, 94 (12), pp. 7496-7501. ISSN 0021-8979

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Item Type:	Journal article
Publication Title:	Journal of Applied Physics
Creators:	Liu, X.W., Hopgood, A.A., Usher, B.F., Wang, H. and Braithwaite, N.S.J.
Publisher:	American Institute of Physics
Place of Publication:	Melville, NY
Date:	2003
Volume:	94
Number:	12
ISSN:	0021-8979
Divisions:	Schools > School of Science and Technology
Record created by:	EPrints Services
Date Added:	09 Oct 2015 10:09
Last Modified:	09 Oct 2015 10:09
URI:	https://irep.ntu.ac.uk/id/eprint/8701

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