Items where Author is "Hector, AL"

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Journal article

BENJAMIN, S.L., DE GROOT, C.H., GURNANI, C., HAWKEN, S.L., HECTOR, A.L., HUANG, R., JURA, M., LEVASON, W., REID, E., REID, G., RICHARDS, S.P. and STENNING, G.B.G., 2018. Compositionally tunable ternary Bi2(Se1-xTex)3 and (Bi1-ySby)2Te3 thin films via low pressure chemical vapor deposition. Journal of Materials Chemistry C, 6 (29), pp. 7734-7739. ISSN 2050-7526

HUANG, R., BENJAMIN, S.L., GURNANI, C., WANG, Y., HECTOR, A.L., LEVASON, W., REID, G. and DE GROOT, C.H., 2016. Nanoscale arrays of antimony telluride single crystals by selective chemical vapor deposition. Scientific Reports, 6, p. 27593. ISSN 2045-2322

BENJAMIN, S.L., CHANG, Y.-P., HECTOR, A.L., JURA, M., LEVASON, W., REID, G. and STENNING, G., 2016. Niobium tetrahalide complexes with neutral diphosphine ligands. Dalton Transactions, 45, pp. 8192-8200. ISSN 1477-9226

BENJAMIN, S.L., DE GROOT, C.H., HECTOR, A.L., HUANG, R., KOUKHARENKO, E., LEVASON, W. and REID, G., 2015. Chemical vapour deposition of antimony chalcogenides with positional and orientational control: precursor design and substrate selectivity. Journal of Materials Chemistry C, 3 (2), pp. 423-430. ISSN 2050-7534

BARTLETT, P.N., BENJAMIN, S.L., DE GROOT, C.H., HECTOR, A.L., HUANG, R., JOLLEYS, A., KISSLING, G.P., LEVASON, W., PEARCE, S.J., REID, G. and WANG, Y., 2015. Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge2Sb2Te5 phase change memory. Materials Horizons, 2, pp. 420-426. ISSN 2051-6347

BENJAMIN, S.L., CHANG, Y.-P., GURNANI, C., HECTOR, A.L., HUGGON, M., LEVASON, W. and REID, G., 2014. Niobium(v) and tantalum(v) halide chalcogenoether complexes – towards single source CVD precursors for ME2 thin films. Dalton Transactions, 43 (44), pp. 16640-16648. ISSN 1477-9234

BENJAMIN, S.L., DE GROOT, C.H., GURNANI, C., HECTOR, A.L., HUANG, R., IGNATYEV, K., LEVASON, W., PEARCE, S.J., THOMAS, F. and REID, G., 2013. Area selective growth of titanium diselenide thin films into micropatterned substrates by low-pressure chemical vapor deposition. Chemistry of Materials, 25 (23), pp. 4719-4724. ISSN 1520-5002

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