Laser annealing of thin film electroluminescent devices deposited at a high rate using high target utilization sputtering

Wakeham, SJ, Tsakonas, C ORCID: https://orcid.org/0000-0002-7342-3405, Cranton, WM ORCID: https://orcid.org/0000-0002-0142-7810, Thwaites, MJ, Boutaud, G and Koutsogeorgis, DC ORCID: https://orcid.org/0000-0001-6167-1084, 2011. Laser annealing of thin film electroluminescent devices deposited at a high rate using high target utilization sputtering. Semiconductor Science and Technology, 26 (4), 045016. ISSN 0268-1242

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Item Type:	Journal article
Publication Title:	Semiconductor Science and Technology
Creators:	Wakeham, S.J., Tsakonas, C., Cranton, W.M., Thwaites, M.J., Boutaud, G. and Koutsogeorgis, D.C.
Publisher:	IOP Publishing
Date:	2011
Volume:	26
Number:	4
ISSN:	0268-1242
Identifiers:	Number Type 10.1088/0268-1242/26/4/045016 DOI
Divisions:	Schools > School of Science and Technology
Record created by:	EPrints Services
Date Added:	09 Oct 2015 11:10
Last Modified:	24 Mar 2022 13:57
URI:	https://irep.ntu.ac.uk/id/eprint/23927

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