High performance transistors based on the controlled growth of triisopropylsilylethynyl-pentacene crystals via non-isotropic solvent evaporation

Pitsalidis, C, Kalfagiannis, N ORCID: https://orcid.org/0000-0002-4030-5525, Hastas, NA, Karagiannidis, PG, Kapnopoulos, C, Ioakeimidis, A and Logothetidis, S, 2014. High performance transistors based on the controlled growth of triisopropylsilylethynyl-pentacene crystals via non-isotropic solvent evaporation. RSC Advances, 4 (40), pp. 20804-20813. ISSN 2046-2069

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Abstract

Triisopropylsilylethynyl-pentacene (TIPS-PEN) has proven to be one of the most promising small molecules in the field of molecular electronics, due to its unique features in terms of stability, performance and ease of processing. Among a wide variety of well-established techniques for the deposition of TIPS-PEN, blade-metered methods have recently gained great interest towards the formation of uniform crystalline films over a large area. Following this rationale, we herein designed a versatile approach based on blade-coating, which overcomes the problem of anisotropic crystal formation by manipulating the solvent evaporation behaviour, in a way that brings about a preferential degree of crystal orientation. The applicability of this method was evaluated by fabricating field-effect transistors on glass as well as on silicon dioxide/silicon (SiO2/Si) substrates. Interestingly, in an attempt to improve the rheological and wetting behaviour of the liquid films on the SiO2/Si substrates, we introduced a polymeric interlayer of polystyrene (PS) or polymethylmethacrylate (PMMA) which concurrently acts as passivation and crystallization assisting layer. In this case, the synergistic effects of the highly-ordered crystalline structure and the oxide surface modification were thoroughly investigated. The overall performance of the fabricated devices revealed excellent electrical characteristics, with high saturation mobilities up to 0.72 cm2 V−1 s−1 (on glass with polymeric dielectric), on/off current ratio >104 and low threshold voltage values (<−5 V).

Item Type:	Journal article
Publication Title:	RSC Advances
Creators:	Pitsalidis, C., Kalfagiannis, N., Hastas, N.A., Karagiannidis, P.G., Kapnopoulos, C., Ioakeimidis, A. and Logothetidis, S.
Publisher:	Royal Society of Chemistry
Date:	15 April 2014
Volume:	4
Number:	40
ISSN:	2046-2069
Identifiers:	Number Type 10.1039/C4RA02300E DOI
Divisions:	Schools > School of Science and Technology
Record created by:	Jonathan Gallacher
Date Added:	11 Apr 2017 10:09
Last Modified:	09 Jun 2017 14:14
URI:	https://irep.ntu.ac.uk/id/eprint/30500

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