Rapid laser-induced photochemical conversion of sol–gel precursors to In2O3 layers and their application in thin-film transistors

Dellis, S, Isakov, I, Kalfagiannis, N ORCID: https://orcid.org/0000-0002-4030-5525, Tetzner, K, Anthopoulos, TD and Koutsogeorgis, DC ORCID: https://orcid.org/0000-0001-6167-1084, 2017. Rapid laser-induced photochemical conversion of sol–gel precursors to In2O3 layers and their application in thin-film transistors. Journal of Materials Chemistry C, 5 (15), pp. 3673-3677. ISSN 2050-7526

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Abstract

We report the development of indium oxide (In2O3) transistors via a single step laser-induced photochemical conversion process of a sol–gel metal oxide precursor. Through careful optimization of the laser annealing conditions we demonstrated successful conversion of the precursor to In2O3 and its subsequent implementation in n-channel transistors with electron mobility up to 13 cm2 V−1 s−1. Importantly, the process does not require thermal annealing making it compatible with temperature sensitive materials such as plastic. On the other hand, the spatial conversion/densification of the sol–gel layer eliminates additional process steps associated with semiconductor patterning and hence significantly reduces fabrication complexity and cost. Our work demonstrates unambiguously that laser-induced photochemical conversion of sol–gel metal oxide precursors can be rapid and suitable for the manufacturing of large-area electronics.

Item Type:	Journal article
Publication Title:	Journal of Materials Chemistry C
Creators:	Dellis, S., Isakov, I., Kalfagiannis, N., Tetzner, K., Anthopoulos, T.D. and Koutsogeorgis, D.C.
Publisher:	Royal Society of Cehmistry
Date:	2017
Volume:	5
Number:	15
ISSN:	2050-7526
Identifiers:	Number Type 10.1039/c7tc00169j DOI
Divisions:	Schools > School of Science and Technology
Record created by:	Linda Sullivan
Date Added:	12 Jun 2017 10:12
Last Modified:	12 Jun 2017 10:12
URI:	https://irep.ntu.ac.uk/id/eprint/30930

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