Memory performance of MOS structure embedded with laser annealed gold NCs

Kastanis, L, Spear, J, Sargentis, C, Konofaos, N, Tsamakis, D, Koutsogeorgis, DC ORCID: https://orcid.org/0000-0001-6167-1084 and Evangelou, EK, 2018. Memory performance of MOS structure embedded with laser annealed gold NCs. Solid-State Electronics, 148, pp. 63-69. ISSN 0038-1101

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Abstract

Memory devices having the structure of n-si(100)/SiO2/metal nanocrystals(NCs)/Y2O3/Au were fabricated and their structural and electrical characteristics have been studied extensively. Gold nanoparticles were formed via laser annealing (LA) of a thin Au layer. The aim was to investigate the use of laser annealing as an effective method to produce NC-based memory devices. In particular, laser annealing was used in order to obtain uniformly spaced NCs with an average diameter of 20 nm. Best results for Au NCs were obtained using fluence below 500 mJ/cm2 and a small number of laser pulses (1-5). After structural characterization using SEM, electrical characterization involving capacitance-voltage and current-voltage measurements revealed good (dis-)charging behavior and memory windows around 3 V. The analysis of the experimental data showed that LA is a promising annealing technique to realize devices with electrical characteristics suitable for future memory devices.

Item Type:	Journal article
Publication Title:	Solid-State Electronics
Creators:	Kastanis, L., Spear, J., Sargentis, C., Konofaos, N., Tsamakis, D., Koutsogeorgis, D.C. and Evangelou, E.K.
Publisher:	Elsevier
Date:	October 2018
Volume:	148
ISSN:	0038-1101
Identifiers:	Number Type 10.1016/j.sse.2018.07.012 DOI S0038110118300510 Publisher Item Identifier
Divisions:	Schools > School of Science and Technology
Record created by:	Linda Sullivan
Date Added:	13 Nov 2018 15:49
Last Modified:	29 Jul 2019 03:00
URI:	https://irep.ntu.ac.uk/id/eprint/34950

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