Piezoelectric graphene field effect transistor pressure sensors for tactile sensing

Yogeswaran, N, Navaraj, WT ORCID: https://orcid.org/0000-0003-4753-2015, Gupta, S, Liu, F, Vinciguerra, V, Lorenzelli, L and Dahiya, R, 2018. Piezoelectric graphene field effect transistor pressure sensors for tactile sensing. Applied Physics Letters, 113 (1): 014102. ISSN 0003-6951

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Abstract

This paper presents graphene field-effect transistor (GFET) based pressure sensors for tactile sensing. The sensing device comprises GFET connected with a piezoelectric metal-insulator-metal (MIM) capacitor in an extended gate configuration. The application of pressure on MIM generates a piezo-potential which modulates the channel current of GFET. The fabricated pressure sensor was tested over a range of 23.54–94.18 kPa, and it exhibits a sensitivity of 4.55 × 10−3 kPa−1. Further, the low voltage (∼100 mV) operation of the presented pressure sensors makes them ideal for wearable electronic applications.

Item Type:	Journal article
Publication Title:	Applied Physics Letters
Creators:	Yogeswaran, N., Navaraj, W.T., Gupta, S., Liu, F., Vinciguerra, V., Lorenzelli, L. and Dahiya, R.
Publisher:	AIP Publishing LLC
Date:	2018
Volume:	113
Number:	1
ISSN:	0003-6951
Identifiers:	Number Type 10.1063/1.5030545 DOI
Rights:	All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Divisions:	Schools > School of Science and Technology
Record created by:	Jonathan Gallacher
Date Added:	14 Aug 2019 08:26
Last Modified:	14 Aug 2019 08:26
URI:	https://irep.ntu.ac.uk/id/eprint/37284

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