Heterogeneous integration of contact-printed semiconductor nanowires for high-performance devices on large areas

García Núñez, C, Liu, F, Navaraj, WT ORCID logoORCID: https://orcid.org/0000-0003-4753-2015, Christou, A, Shakthivel, D and Dahiya, R, 2018. Heterogeneous integration of contact-printed semiconductor nanowires for high-performance devices on large areas. Microsystems & Nanoengineering, 4 (1): 22. ISSN 2055-7434

[thumbnail of 14466_Navaraj.pdf]
Preview
Text
14466_Navaraj.pdf - Published version

Download (4MB) | Preview

Abstract

In this work, we have developed a contact-printing system to efficiently transfer the bottom-up and top-down semiconductor nanowires (NWs), preserving their as-grown features with a good control over their electronic properties. In the close-loop configuration, the printing system is controlled with parameters such as contact pressure and sliding speed/stroke. Combined with the dry pre-treatment of the receiver substrate, the system prints electronic layers with high NW density (7 NWs/μm for bottom-up ZnO and 3 NWs/μm for top-down Si NWs), NW transfer yield and reproducibility. We observed compactly packed (~115 nm average diameters of NWs, with NW-to-NW spacing ~165 nm) and well-aligned NWs (90% with respect to the printing direction). We have theoretically and experimentally analysed the role of contact force on NW print dynamics to investigate the heterogeneous integration of ZnO and Si NWs over pre-selected areas. Moreover, the contact-printing system was used to fabricate ZnO and Si NW-based ultraviolet (UV) photodetectors (PDs) with Wheatstone bridge (WB) configuration on rigid and flexible substrates. The UV PDs based on the printed ensemble of NWs demonstrate high efficiency, a high photocurrent to dark current ratio (>104) and reduced thermal variations as a result of inherent self-compensation of WB arrangement. Due to statistically lesser dimensional variations in the ensemble of NWs, the UV PDs made from them have exhibited uniform response.

Item Type: Journal article
Publication Title: Microsystems & Nanoengineering
Creators: García Núñez, C., Liu, F., Navaraj, W.T., Christou, A., Shakthivel, D. and Dahiya, R.
Publisher: Nature Publishing Group
Date: 2018
Volume: 4
Number: 1
ISSN: 2055-7434
Identifiers:
Number
Type
10.1038/s41378-018-0021-6
DOI
21
Publisher Item Identifier
Rights: Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
Divisions: Schools > School of Science and Technology
Record created by: Linda Sullivan
Date Added: 14 Aug 2019 10:07
Last Modified: 14 Aug 2019 10:07
URI: https://irep.ntu.ac.uk/id/eprint/37297

Actions (login required)

Edit View Edit View

Statistics

Views

Views per month over past year

Downloads

Downloads per month over past year