Near-zero negative real permittivity in far ultraviolet: extending plasmonics and photonics with B1-MoNx

Kassavetis, S, Ozsdolay, BD, Kalfagiannis, N ORCID: https://orcid.org/0000-0002-4030-5525, Habib, A, Tortai, J-H, Kerdsongpanya, S, Sundararaman, R, Stchakovsky, M, Bellas, DV, Gall, D and Patsalas, P, 2019. Near-zero negative real permittivity in far ultraviolet: extending plasmonics and photonics with B1-MoNx. The Journal of Physical Chemistry C, 123 (34), pp. 21120-21129. ISSN 1932-7447

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Abstract

CMOS-compatible, refractory conductors are emerging as the materials that will advance novel concepts into real, practical plasmonic technologies. From the available pallet of materials, those with negative real permittivity at very short wavelengths are extremely rare; importantly, they are vulnerable to oxidation—upon exposure to far-UV radiation—and nonrefractory. Epitaxial, substoichiometric, cubic MoN (B1-MoNx) films exhibit resistivity as low as 250 μΩ cm and negative real permittivity for experimental wavelengths as short as 155 nm, accompanied with unparalleled chemical and thermal stabilities, which are reported herein. Finite-difference time domain calculations suggest that B1-MoNx operates as an active plasmonic element deeper in the UV (100–200 nm) than any other known material, apart from Al, while being by far more stable and abundant than any other UV plasmonic conductor. Unexpectedly, the unique optical performance of B1-MoNx is promoted by nitrogen vacancies, thus changing the common perception on the role of defects in plasmonic materials.

Item Type:	Journal article
Publication Title:	The Journal of Physical Chemistry C
Creators:	Kassavetis, S., Ozsdolay, B.D., Kalfagiannis, N., Habib, A., Tortai, J.-H., Kerdsongpanya, S., Sundararaman, R., Stchakovsky, M., Bellas, D.V., Gall, D. and Patsalas, P.
Publisher:	American Chemical Society
Date:	29 August 2019
Volume:	123
Number:	34
ISSN:	1932-7447
Identifiers:	Number Type 10.1021/acs.jpcc.9b04141 DOI 1116020 Other
Divisions:	Schools > School of Science and Technology
Record created by:	Jonathan Gallacher
Date Added:	28 Aug 2019 13:44
Last Modified:	21 Jul 2021 15:31
URI:	https://irep.ntu.ac.uk/id/eprint/37509

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