Room temperature phase transition of W‐doped VO₂ by atomic layer deposition on 200 mm Si wafers and flexible substrates

Sun, K, Wheeler, C, Hillier, JA ORCID logoORCID: https://orcid.org/0000-0002-3784-9337, Ye, S, Zeimpekis, I, Urbani, A, Kalfagiannis, N ORCID logoORCID: https://orcid.org/0000-0002-4030-5525, Muskens, OL and de Groot, CH(, 2022. Room temperature phase transition of W‐doped VO₂ by atomic layer deposition on 200 mm Si wafers and flexible substrates. Advanced Optical Materials: 2201326. ISSN 2195-1071

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Abstract

The unique structural transition of VO₂ between dielectric and metallic phases has significant potential in optical and electrical applications ranging from volatile switches and neuromorphic computing to smart devices for thermochromic control and radiative cooling. Critical condition for their widespread implementation is scalable deposition method and reduction of the phase transition to near room temperature. Here, a W:VO₂ process based on atomic layer deposition (ALD) is presented that enables precise control of W-doping at the few percent level, resulting in a viable controllable process with sufficient W incorporation into VO₂ to reduce the phase transition to room temperature. It is demonstrated that the incorporation of 1.63 at.% W through ALD growth leads to a state-of-the-art phase transition at 32 °C with emissivity contrast between the low-temperature and high-temperature phase exceeding 40% in a metasurface-based radiative cooling device configuration. The process is shown to be viable on 200 mm silicon substrates as well as flexible polyimide films. The full and self-consistent temperature-dependent characterization of the W-doped VO2 using spectroscopic ellipsometry, electrical conductivity, mid-wave infrared camera, and Fourier transform infrared emissivity, allows for a fully validated material model for the theoretical design of various smart and switchable device applications.

Item Type: Journal article
Publication Title: Advanced Optical Materials
Creators: Sun, K., Wheeler, C., Hillier, J.A., Ye, S., Zeimpekis, I., Urbani, A., Kalfagiannis, N., Muskens, O.L. and de Groot, C.H.
Publisher: Wiley
Date: 18 September 2022
ISSN: 2195-1071
Identifiers:
Number
Type
10.1002/adom.202201326
DOI
1609702
Other
Rights: © 2022 The Authors. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and repro-duction in any medium, provided the original work is properly cited.
Divisions: Schools > School of Science and Technology
Record created by: Jeremy Silvester
Date Added: 04 Nov 2022 11:23
Last Modified: 04 Nov 2022 11:23
URI: https://irep.ntu.ac.uk/id/eprint/47331

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