Managing the supercell approximation for charged defects in semiconductors: finite size scaling, charge correction factors, the bandgap problem and the ab initio dielectric constant

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Castleton, CWM ORCID: https://orcid.org/0000-0001-6790-6569, Höglund, A and Mirbt, S, 2006. Managing the supercell approximation for charged defects in semiconductors: finite size scaling, charge correction factors, the bandgap problem and the ab initio dielectric constant. Physical Review B, 73 (3), 035215. ISSN 1098-0121

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Official URL: http://dx.doi.org/10.1103/PhysRevB.73.035215

Abstract

The errors arising in ab initio density functional theory studies of semiconductor point defects using the supercell approximation are analyzed. It is demonstrated that (a) the leading finite size errors are inverse linear and inverse cubic in the supercell size and (b) finite size scaling over a series of supercells gives reliable isolated charged defect formation energies to around ±0.05 eV. The scaled results are used to test three correction methods. The Makov-Payne method is insufficient, but combined with the scaling parameters yields an ab initio dielectric constant of 11.6±4.1 for InP. Γ point corrections for defect level dispersion are completely incorrect, even for shallow levels, but realigning the total potential in real-space between defect and bulk cells actually corrects the electrostatic defect-defect interaction errors as well. Isolated defect energies to ±0.1 eV are then obtained using a 64 atom supercell, though this does not improve for larger cells. Finally, finite size scaling of known dopant levels shows how to treat the band gap problem: in ⩽200 atom supercells with no corrections, continuing to consider levels into the theoretical conduction band (extended gap) comes closest to experiment. However, for larger cells or when supercell approximation errors are removed, a scissors scheme stretching the theoretical band gap onto the experimental one is in fact correct.

Item Type:	Journal article
Publication Title:	Physical Review B
Creators:	Castleton, C.W.M., Höglund, A. and Mirbt, S.
Date:	25 January 2006
Volume:	73
Number:	3
ISSN:	1098-0121
Identifiers:	Number Type 10.1103/PhysRevB.73.035215 DOI
Divisions:	Schools > School of Science and Technology
Record created by:	EPrints Services
Date Added:	09 Oct 2015 09:40
Last Modified:	10 Oct 2017 15:45
URI:	https://irep.ntu.ac.uk/id/eprint/873